J210 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Dec 01

Philips Semiconductors

Product speciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−±25

VGSO

gate-source voltage

open drain

−−25

VDGO

drain-gate voltage

open source

−−25

forward gate current (DC)

−

Ptot

total power dissipation

Tamb ≤ 50 °C; note 1; see Fig.13

−

400

Tstg

storage temperature

−65

150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient; note 1

250

K/W

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