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ISF1054 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 ISF1054
상세설명  SiC N-Channel MOSFET
PDF  7 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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ISF1054 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISF1054 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISF1054 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISF1054 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISF1054 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISF1054 Datasheet HTML 5Page - Inchange Semiconductor Company Limited ISF1054 Datasheet HTML 6Page - Inchange Semiconductor Company Limited ISF1054 Datasheet HTML 7Page - Inchange Semiconductor Company Limited  
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ISF1054
eq SCT070W120G3AG
SiC N-Channel MOSFET
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.63
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 1mA
1200
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = VGS; ID = 1mA
1.8
3.0
4.2
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 18V; ID= 20A;TC= 25℃
--
75
85
mΩ
VGS= 18V; ID= 20A;TC= 125℃
--
125
--
IGSS
Gate Source Leakage Current
VGS= 18V; VDS= 0V
--
--
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V; VGS = 0V;TC=
25℃
--
1
10
μA
VDS = 1200V; VGS = 0V;TC=
175℃
--
5
--
Gfs
Forward Transconductance
VDS = 20V, ID = 20A
--
10
--
S
Ciss
Input Capacitance
VGS = 0V,
VDS = 1000V,
f = 1.0MHz
VAC=25mV
--
920
--
pF
Coss
Output Capacitance
--
58
--
Crss
Reverse Transfer Capacitance
--
4.0
--
Qg
Total Gate Charge
VDD=800V,
ID= 20A,
VGS= - 4to +18V
--
41
--
nC
Qgs
Gate-Source Charge
--
7
--
Qgd
Gate-Drain Charge
--
49
--
td(on)
Turn-on Delay Time
VGS= - 4to +15V
ID= 20A,
VDD= 800V,
Rg= 0Ω,
L=120uH
--
13
--
ns
tr
Turn-on Rise Time
--
19
--
td(off)
Turn-off Delay Time
--
14
--
tf
Turn-off Fall Time
--
15
--



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