JC501P datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 27

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

JC501

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =45V

−−

IE = 0; VCB =45V; Tj = 125 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =6V

−−

100

hFE

DC current gain

IC = 1 mA; VCE = 5 V

135

−

600

hFE

DC current gain

IC = 1 mA; VCE =5V

JC501P

135

−

270

JC501Q

200

−

400

JC501R

300

−

600

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA

−−

200

IC = 100 mA; IB =5mA

−−

600

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

830

IC = 100 mA; IB =5mA

−−

1.06

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

550

−

700

collector capacitance

IE =ie = 0; VCB =10V; f=1MHz

−−

6pF

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

11.5

−

transition frequency

IC = 10 mA; VCE =5V;

f = 100 MHz

−

130

−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V;

RS =2kΩ; f = 1 kHz; B = 200 Hz

−−

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