JC549B datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Jul 08

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

JC549; JC550

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. VBEsat decreases by about 1.7 mV/K with increasing temperature.

2. VBE decreases by about 2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−−

IE = 0; VCB = 30 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC =10 µA; VCE =5V;

see Figs 2 and 3

JC549B; JC550B

−

150

−

JC549C; JC550C

−

270

−

hFE

DC current gain

IC = 2 mA; VCE =5V;

see Figs 2 and 3

JC549; JC550

200

−

800

JC549B; JC550B

200

290

450

JC549C; JC550C

420

520

800

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA

−

250

IC = 100 mA; IB =5mA

−

200

600

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

700

−

IC = 100 mA; IB = 5 mA; note 1

−

900

−

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V; note 2

580

660

700

IC = 10 mA; VCE = 5 V; note 2

−−

770

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

−

emitter capacitance

IC =ic = 0; VEB = 500 mV; f = 1 MHz

−

11.5

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−−

MHz

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 10 Hz to 15.7 kHz

−−

4dB

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−−

4dB

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