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KM110B/2 데이터시트(PDF) 4 Page - NXP Semiconductors

부품명 KM110B/2
상세설명  Magnetic field sensor
PDF  6 Pages
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

KM110B/2 데이터시트(HTML) 4 Page - NXP Semiconductors

  KM110B/2 Datasheet HTML 1Page - NXP Semiconductors KM110B/2 Datasheet HTML 2Page - NXP Semiconductors KM110B/2 Datasheet HTML 3Page - NXP Semiconductors KM110B/2 Datasheet HTML 4Page - NXP Semiconductors KM110B/2 Datasheet HTML 5Page - NXP Semiconductors KM110B/2 Datasheet HTML 6Page - NXP Semiconductors  
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November 1994
4
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KM110B/2
Notes to the characteristics
1. Magnet (Ferroxdure 100) delivers an auxiliary field of
Hx = 3.6 kA/m (temperature coefficient: −0.2 %/K).
Above 110
°C the auxiliary field Hx will be <3.0 kA/m;
stable sensor operation may be threatened by
disturbing magnetic fields.
2.
.
3. The sensitivity increases and decreases linear with the
supply voltage, thus the static output voltage is directly
proportional to the supply voltage.
4. Sensor bridge response only. When sensing high
speed rotation, the operating frequency may be
reduced due to eddy current effects.
S
V
O at Hy
1.6 kA/m
=
()
V
O at Hy
0
=
()
–
1.6
V
CC
×
-----------------------------------------------------------------------------------------------------------------
=
M = direction of magnetization.
N, S = magnetic poles.
Fig.3 Principle of magnetization.
handbook, halfpage
MBD882
43
2
1
Hy
Hx
M
NS
S
Tamb =25 °C; Voffset =0.
Fig.4 Sensor output characteristic.
handbook, halfpage
–2
–1
0
2
8
4
–4
–8
0
MBD885
1
V
(mV/V)
H y (kA/m)
O
Fig.5 Power derating curve.
handbook, halfpage
50
100
125
0
100
MBD892
150
75
50
25
o
( C)
(mW)
tot
200
P
Tamb
0



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