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PA2423U-R 데이터시트(PDF) 3 Page - SiGe Semiconductor, Inc.

부품명 PA2423U-R
상세설명  RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
PDF  10 Pages
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제조업체  SIGE [SiGe Semiconductor, Inc.]
홈페이지  http://www.sige.com
Logo SIGE - SiGe Semiconductor, Inc.

PA2423U-R 데이터시트(HTML) 3 Page - SiGe Semiconductor, Inc.

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PA2423U
RangeCharger
TM 2.4 GHz Bluetoothtm Power Amplifier IC
Preliminary
131-DST-01 Rev 1.1 Apr-18-2006
Confidential
3 of 10
QA041806
Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is
ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage
-0.3
+3.6
V
VCTL
Control Voltage
-0.3
VCC
V
VRAMP
Ramping Voltage
-0.3
VCC
V
IN
RF Input Power
-
+8
dBm
TA
Operating Temperature Range
-40
+85
°C
TSTG
Storage Temperature Range
-40
+150
°C
Tj
Maximum Junction Temperature
-
+150
°C
DC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VRAMP = VCTL = 3.3 V, PIN = 0 dBm, TA = 25
°C, f = 2.45 GHz, input and output
externally matched to 50Ω unless otherwise noted.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
2.7
3.3
3.6
V
ICC
Supply Current (ICC = IVCC0 + IVCC1 + IVCC2),
VCTL = 3.3 V, POUT_MAX ≤ 22.5 dBm
-
135
160
mA
∆IccTEMP
Supply Current variation over temperature
from TA = 25
°C
(-40
°C < TA < +85 °C)
-
25
-
%
VCTL
PA Output Power Control Voltage Range
0
-
VCC
V
ICTL
Current sunk by VCTL pin
-
200
250
µA
Logic High Voltage
2.0
-
-
V
VRAMP
Logic Low Voltage
-
-
0.8
V
Istdby
Leakage Current when VRAMP = 0 V, No RF,
VCTL = high
-
0.5
10
µA



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