1998 Mar 31

2

Philips Semiconductors

Product specification

Magnetic field sensor

KMZ10B

DESCRIPTION

The KMZ10B is a sensitive magnetic field sensor,

employing the magnetoresistive effect of thin-film

permalloy. Its properties enable this sensor to be used in a

wide range of applications for current and field

measurement, revolution counters, angular or linear

position measurement, proximity detectors, etc.

PINNING

PIN

SYMBOL

DESCRIPTION

output voltage

2

GND

ground

3

output voltage

supply voltage

Fig.1 Simplified outline SOT195.

handbook, halfpage

MGD806

123 4

H y

H x

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

bridge supply voltage

−

512

V

magnetic field strength

−2

−

+2

kA/m

auxiliary field

−

3

−

kA/m

S

sensitivity

−

4

−

bridge resistance

1.6

−

2.6

k

Ω

offset voltage

−1.5

−

+1.5

mV/V

mV V

⁄

kA m

⁄

-----------------

CIRCUIT DIAGRAM

Fig.2 Simplified circuit diagram.

handbook, full pagewidth

MLC716

4

3

2

V

CC

1

+VO

–VO

GND