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STPS10H100CG 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STPS10H100CG 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Schottky Barrier Rectifier STPS10H100CG www.iscsemi.com 1 FEATURES ·Multi-layer Metal -Silicon Potential Structure ·Low leakage current at high temperature ·Low static and dynamic losses as a result ofthe Schottky barrier MECHANICAL CHARACTERISTICS ·Schottky barrier rectifier designed for highfrequency miniature switched mode power ·Supplies such as adapters and on-board DC/DCconverters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current 5 10 A IFSM Nonrepetitive Peak Surge Current 10ms single half sine-wave superimposed on rated load conditions 180 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ |
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