LLE18100X datasheet(4/9 Pages) PHILIPS

4 / 9 page

November 1994

Philips Semiconductors

Product speciﬁcation

NPN silicon planar epitaxial microwave

power transistor

LLE18100X

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tmb = 25 °C unless otherwise speciﬁed

APPLICATION INFORMATION

Microwave performance up to Tmb =25 °C in a common emitter class AB ampliﬁer (note 1).

Note

1. The test circuit is split into 2 independant halves each being 30

× 40 mm in size.

SYMBOL

PARAMETER

CONDITIONS

MAX.

Rth j-mb

thermal resistance from junction to mounting base

Tj = 100 °C

4.2 K/W

Rth mb-h

thermal resistance from mounting base to heatsink

0.2 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

VCB = 20 V;

IE =0

−

1mA

ICER

collector cut-off current

VCE = 30 V;

RBE = 220 Ω

−

ICEO

collector cut-off current

VCE = 20 V;

IB =0

−

IEBO

emitter cut-off current

VEB = 1.5 V;

IC =0

−

100

µA

hFE

DC current gain

VCE =3 V;

IC =1 A

100

MODE OF OPERATION

(GHz)

VCE

(V)

ICQ

(A)

PL1

(W)

Gpo

(dB)

Zi/ZL

(

Ω)

class AB (CW)

1.85

0.1

≥ 9;

typ. 11

≥ 8;

typ. 10

see Figs 8 and 9

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