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AM29F032B-75SC 데이터시트(PDF) 36 Page - Advanced Micro Devices |
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AM29F032B-75SC 데이터시트(HTML) 36 Page - Advanced Micro Devices |
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36 / 39 page ![]() 34 Am29F032B 21610D5 November 2, 2006 D A TA SH EE T ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 5.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 4.5 V, 1,000,000 cycles (4.75 V for -75). 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set DQ5 = 1. See the section on DQ5 for further information. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle sequence for programming. See Table 5 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTIC Note: Includes all pins except VCC. Test conditions: VCC = 5.0 Volt, one pin at a time. TSOP AND SO PIN CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 1 8 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 64 sec Byte Programming Time 7 300 µs Excludes system-level overhead (Note 5) Chip Programming Time (Note 3) 28.8 86.4 sec Description Min Max Input Voltage with respect to VSS on I/O pins –1.0 V VCC + 1.0 V VCC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Conditions Min Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Parameter Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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