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AM29PL160CB-65REF 데이터시트(PDF) 21 Page - Advanced Micro Devices

부품명 AM29PL160CB-65REF
상세설명  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
PDF  44 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29PL160CB-65REF 데이터시트(HTML) 21 Page - Advanced Micro Devices

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May 9, 2006 22143C7
Am29PL160C
19
D A TA
SH EE T
pend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the device has resumed erasing.
Temporary Unprotect Enable/Disable
Command Sequence
The temporary unprotect command sequence is a
four-bus-cycle operation. The sequence is initiated by
writing two unlock write cycles. A third write cycle sets
up the command. The fourth and final write cycle en-
ables or disables the temporary unprotect feature. If
the temporary unprotect feature is enabled, all sectors
are temporarily unprotected. The system may program
or erase data as needed. When the system writes the
temporary unprotect disable command sequence, all
sectors return to their previous protected or unpro-
tected settings. See Table 10 for more information.
Notes:
1. See Table 10 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress



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