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AM29LV065MU112REF 데이터시트(PDF) 56 Page - Advanced Micro Devices

부품명 AM29LV065MU112REF
상세설명  64 Megabit (8 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
PDF  62 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

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54
Am29LV065MU
September 12, 2006
DA TA
SH EET
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32–byte write buffer operation.
4. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
10 for further information on command definitions.
7. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Excludes 00h programming
prior to erasure (Note 5)
Chip Erase Time
64
128
sec
Effective Byte Program Time, using the Write
Buffer (Note 3)
11
57
µs
Excludes system level
overhead (Note 6)
Effective Accelerated Byte Program Time, using
the Write Buffer (Note 3)
8.8
49
µs
Single Byte Program Time
100
800
µs
Accelerated Single Byte Program Time (Note 4)
90
720
µs
Chip Program Time, using the Write Buffer
92
170
sec
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA



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