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MMST3906 데이터시트(PDF) 2 Page - Diodes Incorporated |
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MMST3906 데이터시트(HTML) 2 Page - Diodes Incorporated |
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2 / 9 page ![]() DS30749 Rev. 3 - 2 2 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Maximum Ratings: @TA = 25°C unless otherwise specified Sub-Component Device - Discrete PNP Transistor (Q1) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -6 V Output Current - continuous (Note 4) IC -200 mA Maximum Ratings: @TA = 25°C unless otherwise specified Sub-Component Device - Discrete NPN Transistor (Q2) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Output Current - continuous (Note 4) IC 200 mA Notes: 4. Short duration pulse test used to minimize self-heating effect. |
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