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AM41PDS3228DB10IS 데이터시트(PDF) 57 Page - Advanced Micro Devices

부품명 AM41PDS3228DB10IS
상세설명  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
PDF  59 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM41PDS3228DB10IS 데이터시트(HTML) 57 Page - Advanced Micro Devices

Back Button AM41PDS3228DB10IS Datasheet HTML 51Page - Advanced Micro Devices AM41PDS3228DB10IS Datasheet HTML 52Page - Advanced Micro Devices AM41PDS3228DB10IS Datasheet HTML 53Page - Advanced Micro Devices AM41PDS3228DB10IS Datasheet HTML 54Page - Advanced Micro Devices AM41PDS3228DB10IS Datasheet HTML 55Page - Advanced Micro Devices AM41PDS3228DB10IS Datasheet HTML 56Page - Advanced Micro Devices AM41PDS3228DB10IS Datasheet HTML 57Page - Advanced Micro Devices AM41PDS3228DB10IS Datasheet HTML 58Page - Advanced Micro Devices AM41PDS3228DB10IS Datasheet HTML 59Page - Advanced Micro Devices  
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Am41PDS3228D
May 13, 2002
P R E L IMINARY
SRAM DATA RETENTION
Notes:
1. CE1#s
≥ V
CC – 0.2 V, CE2s ≥ VCC – 0.2 V (CE1#s controlled) or CE2s ≤ 0.2 V (CE2s controlled), CIOs = VSS or VCC.
2. Typical values are not 100% tested.
Figure 33.
CE1#s Controlled Data Retention Mode
Figure 34.
CE2s Controlled Data Retention Mode
Parameter
Symbol
Parameter Description
Test Setup
Min
Typ
Max
Unit
VDR
VCC for Data Retention
CS1#s
≥ V
CC – 0.2 V (Note 1)
1.0
2.2
V
I
DR
Data Retention Current
VCC = 3.0 V, CE1#s ≥ VCC – 0.2 V
(Note 1)
0.5
(Note 2)
6µA
t
SDR
Data Retention Set-Up Time
See data retention waveforms
0ns
t
RDR
Recovery Time
t
RC
ns
VDR
VCC
1.8V
1.4V
CE1#s
GND
Data Retention Mode
CE1#s
≥ VCC - 0.2 V
tSDR
tRDR
VCC
1.8 V
0.4 V
VDR
CE2s
GND
Data Retention Mode
tSDR
tRDR
CE2s < 0.2 V



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