AM29LV640MT100REF datasheet(4/66 Pages) AMD

4 / 66 page

Am29LV640MT/B

26190C8 February 1, 2007

D A TA

SH EE T

GENERAL DESCRIPTION

The Am29LV640M is a 64 Mbit, 3.0 volt single power

supply flash memory device organized as 4,194,304

wo rds o r 8,388 ,6 08 by tes. T he device has an

8-bit/16-bit bus and can be programmed either in the

host system or in standard EPROM programmers.

An access time of 90, 100, 110, or 120 ns is available.

Note that each access time has a specific operating

voltage range (V

CC) and an I/O voltage range (VIO), as

specified in Product Selector Guide on page 6 and Or-

dering Information on page 10. The device is offered in

a 48-pin TSOP, 63-ball Fine-pitch BGA or 64-ball Forti-

fied BGA package. Each device has separate chip en-

able (CE#), write enable (WE#) and output enable

(OE#) controls.

Each device requires only a single 3.0 volt power

supply for both read and write functions. In addition to

a V

CC input, a high-voltage accelerated program

(ACC) function provides shorter programming times

through increased current on the WP#/ACC input. This

feature is intended to facilitate factory throughput dur-

ing system production, but can also be used in the

field if desired.

The device is entirely command set compatible with

the JEDEC single-power-supply Flash standard.

Commands are written to the device using standard

microprocessor write timing. Write cycles also inter-

nally latch addresses and data needed for the pro-

gramming and erase operations.

The sector erase architecture allows memory sec-

tors to be erased and reprogrammed without affecting

the data contents of other sectors. The device is fully

erased when shipped from the factory.

Device programming and erasure are initiated through

command sequences. Once a program or erase oper-

ation has begun, the host system need only poll the

DQ7 (Data# Polling) or DQ6 (toggle) status bits or

monitor the Ready/Busy# (RY/BY#) output to deter-

mine whether the operation is complete. To facilitate

programming, an Unlock Bypass mode reduces com-

mand sequence overhead by requiring only two write

cycles to program data instead of four.

Hardware data protection measures include a low

CC detector that automatically inhibits write opera-

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of sectors of memory.

This is achieved in-system or via programming equip-

ment.

The Erase Suspend/Erase Resume feature allows

the host system to pause an erase operation in a given

sector to read or program any other sector and then

complete the erase operation. The Program Sus-

pend/Program Resume feature enables the host sys-

tem to pause a program operation in a given sector to

read any other sector and then complete the program

operation.

The hardware RESET# pin terminates any operation

in progress and resets the device, after which it is then

ready for a new operation. The RESET# pin can be

tied to the system reset circuitry. A system reset would

thus also reset the device, enabling the host system to

read boot-up firmware from the Flash memory device.

The device reduces power consumption in the

standby mode when it detects specific voltage levels

on CE# and RESET#, or when addresses have been

stable for a specified period of time.

The Write Protect (WP#) feature protects the top or

bottom two sectors by asserting a logic low on the

WP#/ACC pin. The protected sector is still protected

even during accelerated programming.

T he Secured Silicon Sector pr o v ide s a

128-word/256-byte area for code or data that can be

permanently protected. Once this sector is protected,

no further changes within the sector can occur.

AMD MirrorBit flash technology combines years of

Flash memory manufacturing experience to produce

the highest levels of quality, reliability and cost effec-

tiveness. The device electrically erases all bits within a

sector simultaneously via hot-hole assisted erase. The

data is programmed using hot electron injection.

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