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SSTX404S 데이터시트(PDF) 1 Page - Burland Technology Solutions

부품명 SSTX404S
상세설명  SSTX404S NPN General Purpose Amplifier
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제조업체  BURLAND [Burland Technology Solutions]
홈페이지  https://www.burland.com/
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Technical Data
Data Sheet N2115, Rev. A
China - Germany - Korea - Singapore - United States 
http://www.smc-diodes.com - sales@ smc-diodes.com 
SSTX404S
SSTX404S NPN General Purpose Amplifier
TRANSISTOR(Q1)
Characteristic
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
75
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
0.6
A
DIODE(D1)
Characteristic
Symbol
Limits
Unit
Maximum (peak) Forward Current
IFM
300
mA
Average Forward Current
IO
100
mA
Surge Current (100uS)
IFSM
2
A
COMMON
Characteristic
Symbol
Limits
Unit
Maximum Output (Pin1-Pin3)Voltage
VO
40
V
Power Dissipation
PC
350
mW
Junction Temperature Range
Tj
150
°C
Storage Temperature Range
Tstg
-55~150
°C
Features
Schematic & Pin Configuration
Mechanical Characteristics
Maximum Ratings@TA=25°C unless otherwise specified
Low saturation Voltage(Transistor)
:VCE(sat)=0.3V(Max.);IC=150mA,IB=15mA
Fast Reverse Recovery Time(Diode)
Capable of 350mWatts of Power Dissipation
Operating and Storage Junction Temperatures: -55℃ to 150℃
Surface Mount SOT-23 Package
RoHS compliant / Green EMC
Collector current: IC=0.6A
SOT-23
Case: SOT-23, Molded Plastic
Terminals: Plated leads Solderable per MIL-STD-202,
Method 208
Mounting Position: Any
DIODE(D1)
1. EMITTER/ANODE
2. BASE
3. COLLECTOR/CATHODE


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