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AM29LV033MU 데이터시트(PDF) 52 Page - SPANSION

부품명 AM29LV033MU
상세설명  32 Megabit (4 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
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Am29LV033MU
September 12, 2006
DA TA
SH EET
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information. Write buffer program is typical per word.
3. For 1–32 bytes programmed.
4. Effective write buffer specification is based upon a 32-byte write buffer operation.
5. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer.
6. When using the program suspend/resume feature, if the suspend command is issued within t
POLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after t
POLL, tPOLL is not required again prior to
reading the status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation
(Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program Operation,
Per Byte (Notes 2, 4)
Typ
7.5
µs
Accelerated Effective Write Buffer Program
Operation, Per Byte (Notes 2, 4)
Typ
6.25
µs
Single Byte Program (Notes 2, 5)
Typ
60
µs
Accelerated Single Byte Programming
Operation (Note 2, 5)
Typ
54
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
t
RH
RESET# High Time Before Write (Note 1)
Min
50
ns
t
POLL
Program Valid before Status Polling
(Note 6)
Max
4
µs



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