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M500000013 데이터시트(PDF) 62 Page - SPANSION |
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M500000013 데이터시트(HTML) 62 Page - SPANSION |
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62 / 70 page ![]() May 19, 2003 Am50DL9608G 61 P R E L I M I NARY PSEUDO SRAM AC CHARACTERISTICS Read Cycle Notes: 1. WE# = V IH. 2. t HZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 3. At any given temperature and voltage condition, t HZ (Max.) is less than tLZ (Min.) both for a given device and from device to device interconnection. 4. Do not access device with cycle timing shorter than t RC for continuous periods < 10 µs. Figure 29. Pseudo SRAM Read Cycle Data Valid High-Z tRC CE#1s Address OE# Data Out tOH tAA tCO1 tOE tOLZ tBLZ tLZ tOHZ tHZ CE2s tCO2 |
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