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DS312W 데이터시트(PDF) 2 Page - UN Semiconducctor INC

부품명 DS312W
상세설명  Surface Mount Schottky Barrier Rectifier
PDF  4 Pages
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제조업체  UNSEMI [UN Semiconducctor INC]
홈페이지  http://www.unsemi.com.tw
Logo UNSEMI - UN Semiconducctor INC

DS312W 데이터시트(HTML) 2 Page - UN Semiconducctor INC

  DS312W Datasheet HTML 1Page - UN Semiconducctor INC DS312W Datasheet HTML 2Page - UN Semiconducctor INC DS312W Datasheet HTML 3Page - UN Semiconducctor INC DS312W Datasheet HTML 4Page - UN Semiconducctor INC  
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ROHS
Revision March 1,2022
www.unsemi.com.tw
For technical questions, contact: tech@unsemi.com.tw
ROHS
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
2/3
DS32W~DS320W
Surface Mount Schottky Barrier Rectifier
Electrical Characteristics Curves
Fig. 2 Typical Reverse Characteristics
Fig.1 Forward Current Derating Curve
Fig. 4 Typical Junction Capacitance
Fig.3 Typical Forward Characteristic
Fig.5 Maximum Non-Repetitive Peak Forward
Surage Current
Fig. 6 Typical Transient Thermal Impedance
0.5
1.0
1.5
2.0
2.5
3.0
0
0
25
50
75
100
125
150
3.5
Case Temperature (°C)
Single phase half-wave 60Hz
resis tive or inductive load
20
40
60
80
0
T =25
J
°
C
Percent of Rated Peak Reverse Voltage(%)
100
100
101
102
103
104
T =75
J
°
C
DS32W/DS34W
DS36W-DS320W
T =100
J
°
C
0.1
0
0.4
1.4
Instaneous Forward Voltage (V)
1.0
10
0.6
0.2
0.8 1.0 1.2
1.8
1.6
20
DS32W/DS34W
DS36W/DS38W
DS310W/DS312W
DS315W/DS320W
10
0.1
Reverse Voltage (V)
10
100
200
500
20
50
100
1
DS32W/DS34W
DS36W-DS320W
T =25
J
°
C
10
100
Number of Cycles at 60Hz
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
20
40
60
0
80
100
0.01
100
1
10
100
t, Pulse Duration(sec)
0.1
1
10
200



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