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US3AF 데이터시트(PDF) 2 Page - UN Semiconducctor INC |
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US3AF 데이터시트(HTML) 2 Page - UN Semiconducctor INC |
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2 / 4 page ![]() ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/3 US3AF~US3MF Surface Mount Fast Recovery Rectifiers Electrical Characteristics Curves Fig. 2 Typical Reverse Characteristics Fig.1 Forward Current Derating Curve Fig.3 Typical Forward Characteristic Fig.4 Maximum Non-Repetitive Peak Forward Surage Current 0.5 1.0 1.5 2.0 2.5 4.0 0 0 25 50 75 100 125 150 175 Case Temperature (°C) 3.0 3.5 Single phase half-wave 60 Hz resistive or inductive load 0.1 1.0 10 100 20 40 60 80 100 120 0 140 Percent of Rated Peak Voltage (%) Reverse T =125 J ° C T =25 J ° C 2.0 2.5 1.5 0 0.01 0.1 1.0 10 0.5 1.0 0.001 Instaneous Forward Voltage (V) T =25 J ° C US3JF~US3MF US3GF US3AF~US3DF 20 40 60 80 100 120 0 10 100 Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) 1 |
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