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NE5209D 데이터시트(PDF) 9 Page - NXP Semiconductors |
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NE5209D 데이터시트(HTML) 9 Page - NXP Semiconductors |
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9 / 15 page ![]() Philips Semiconductors Product specification NE/SA5209 Wideband variable gain amplifier 1990 Aug 20 9 10 0 0.6 1 0.8 0.4 0.2 VCC = 5.5V VCC = 5.0V VCC = 4.5V VAGC (V) 9 8 7 6 5 4 3 2 1 0 1.2 T = 25 °C RS = RL = 50Ω Rt = ∞ f = 10MHz DC Tested See test-setup 1 SR00251 Figure 15. Gain vs VAGC and VCC RS = RL = 50Ω Rt = ∞ See test-setup 1 0 0.2 0.4 0.6 0.8 VAGC (V) 10 9 8 7 6 5 4 3 2 1 0 1 1.2 -55 °C +25 °C +125 °C SR00253 Figure 16. Insertion Gain vs VAGC and Temperature 20 Temperature ( °C) –100 50 150 100 0 –50 5.5V 5.0V 4.5V 19.5 19 18.5 18 17.5 17 16.5 16 15.5 15 RS = 0Ω RL = ∞ Rt = ∞ VAGC = 1.1V See Test Setup 1 SR00252 Figure 17. Voltage Gain vs Temperature and VCC –100 –50 0 50 100 55 50 45 40 35 30 25 20 150 VCC = 7.0V See test-setup 1 Temperature ( °C) VCC = 6.0V VCC = 5.0V VCC = 4.5V SR00254 Figure 18. Supply Current vs Temperature and VCC |
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