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CMM0016 데이터시트(PDF) 1 Page - Mimix Broadband |
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CMM0016 데이터시트(HTML) 1 Page - Mimix Broadband |
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1 / 5 page ![]() 2.0-20.0 GHz GaAs MMIC 1W Power Amplifier Page 1 of 5 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. CMM0016 October 2006 - Rev 13-Oct-06 (TA= 25°C,Vdd = 12V) 1 x a M p y T n i M s t i n U s r e t e m a r a P 0 . 0 2 0 . 2 z H G e g n a R y c n e u q e r F 5 . 2 1 5 . 8 B d n i a G r a e n i L 5 . 1 B d ± s s e n t a l F n i a G Power Output: 2-18 GHz (@1 dB Gain Compression) dBm 28.5 Power Output: 2-20 GHz (@1 dB Gain Compression) dBm 26.5 0 . 5 m B d ) y c n e u q e r f g n i t a r e p o r e v o ( n o i t a i r a V B d 1 P 5 . 9 2 m B d z H G 8 1 - 2 : r e w o P t u p t u O d e t a r u t a S 5 . 7 2 m B d z H G 0 2 - 2 : r e w o P t u p t u O d e t a r u t a S 0 . 0 1 - B d s s o L n r u t e R t u p n I 0 . 0 1 - B d s s o L n r u t e R t u p t u O 0 3 7 0 9 6 0 5 6 A m t n e r r u C 7 . 5 1 W / C ° e c n a t s i s e R l a m r e h T Stability 2 Unconditionally Stable Absolute Maximum Ratings 1 g n i t a R r e t e m a r a P Drain Voltage 9.0V (min.) / 13.0V (max.) A m 0 5 7 t n e r r u C n i a r D Continuous Power Dissipation 9.5 W m B d 0 2 r e w o P t u p n I Storage Temperature -50°C to +150°C Channel Temperature 175°C Operating Backside Temperature -40°C to (See note 2) Die Attach and Bonding Procedures Die Attach: Eutectic die attach is recommended. For eutec- tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1 min or less. Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre- stressed); Thermocompression bonding is preferred over thermosonic bonding. For thermocompression bonding: Stage Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding Tip Pressure: 18 to 40 gms depending on size of wire. Chip Diagram Notes: 1. Operation outside these limits can cause permanent damage. 2. Calculation maximum operating temperature: Tmax = 175–(Pdis [W] x 15.7) [°C]. Units: mm Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 4). 2. Stability factor measured on-wafer. Features Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1dB: 29 dBm, Typ. @ 18 GHz Linear Gain: 9.5 dB, Typ. @ 18 GHz pHEMT Technology Silicon Nitride Passivation Specifications |
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