| 전자부품 데이터시트 검색엔진 |
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IXYN110N120A4 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXYN110N120A4 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISGM2035 eq IXYN110N120A4 Ultra Low-Vsat IGBT www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS(TJ = 25 °C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VCES Collector-Emitter Breakdown Voltage VGE=0, IC= 0.25mA 1200 -- -- V VGE(th) Gate-Emitter Threshold Voltage VGE= VCE, IC=3mA 4.5 -- 6.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 110A, VCE= 15V, TJ=25℃ -- 1.45 1.8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 110A, VCE= 15V, TJ=150℃ -- 1.6 -- V ICES Zero Gate Voltage Collector Current VCE=1200V, VGE=0 -- -- 25 uA ICES Zero Gate Voltage Collector Current VCE=1200V, VGE=0 TJ=125℃ -- -- 500 uA IGES Gate-Emitter Leakage Current VGE=±20V, VCE=0 -- -- ± 200 nA PACKAGE DIMENSIONS (UNIT: mm): DIM Millimeter min max A 31.40 31.60 B 7.70 8.10 C 4.20 4.40 D 4.20 4.40 E 4.10 4.40 F 14.90 15.10 G 30.10 30.30 H 38.00 38.40 J 12.00 12.60 K 9.35 9.65 L 0.74 0.84 M 12.30 12.70 N 24.40 25.00 0 1.90 2.10 P 2.92 3.32 Q 26.60 27.00 R 3.80 4.20 S 4.95 5.45 T 23.70 24.30 U 0 0.10 V 3.50 5.50 W 20.15 20.45 Z 2.50 2.70 |
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