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TIP32C 데이터시트(PDF) 1 Page - Silicon Supplies |
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TIP32C 데이터시트(HTML) 1 Page - Silicon Supplies |
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1 / 2 page ![]() Page 1 of 2 www.siliconsupplies.com Die Size (Excluding Saw Street) 1500 x 1500 59 x 59 µm mils Base Pad Size Emitter Pad Size 11 x 25 11 x 34 mils Die Thickness 318 (±25) 12.5 (±1) µm mils Top Metal Composition Al Back Metal Composition Ti/Ni/Ag PNP Transistor Bare Die - TIP32C Bipolar Medium Power Transistor in bare die form Complement to NPN TIP31C Collector current up to 3A High switching speed Improved hFE linearity Solderable back metal High Reliability tested grades for Military + Space Rev 1.0 22/08/23 Features: Die Dimensions in µm (mils) 1500 (59) DIE BACK = COLLECTOR Ordering Information: The following part suffixes apply: No suffix - Commercial grade die “H” – Hi-rel grade die + MIL-STD-38534 Class H LAT “K” – Hi-rel grade die + MIL-STD-38534 Class K LAT. LAT = Lot acceptance Test. For information on Hi-Rel LAT flows please see below. www.siliconsupplies.com\bare-die-lot-qualification Supply Formats: Mechanical Specification Default – Die in Waffle Pack (400 per tray capacity) Sawn Wafer on Tape – Specific request Unsawn Wafer – Specific request With additional electrical selection – Specific request Sawn as pairs or adjacent pair pick – Specific request B E |
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