Maximum Rating (at TA=25°C unless otherwise noted)

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

170

Operating temperature range

Tj

°C

Storage temperature range

TSTG

-55~+150

°C

ESD

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

-40~+125

Peak pulse current

IPP

A

TP = 8/20µs

5

TP = 8/20µs

±30

ESD

±30

ACPDQC12VA-HF

RoHS Device

Halogen Free

SMD ESD Protection Diode

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Diode breakdown voltage

VBR

V

IT = 1mA

12.4

Reverse current

IR

µA

VRWM = 12V

0.1

Clamping voltage

VC

V

34

IPP = 5A, TP = 8/20µs

V

Working peak reverse voltage

VRWM

12

Junction capacitance

5

CJ

pF

VR = 0V, f = 1MHz

3

IPP = 1A, TP = 8/20µs

22

VC

V

26

16

Mechanical data

- Case: 0402C/SOD-923F package,

molded plastic.

- Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

- Mounting position: Any.

- Weight: 0.001 grams (approx.).

Circuit Diagram

Dimensions in inches and (millimeter)

0402C/SOD-923F

0.022(0.55)

0.018(0.45)

0.001(0.02)

Max.

0.041(1.05)

0.037(0.95)

0.026(0.65)

BSC.

0.012(0.30)

0.008(0.20)

0.022(0.55)

0.018(0.45)

0.026(0.65)

0.022(0.55)

High-Reliability and High-Performance

Features

- Bi-directional ESD protection.

- Surface mount package.

- High component density.

- Low clamping voltage.

- Low leakage.

- IEC 61000-4-2 (ESD) ; ±30KV(contact)

- AEC-Q101 Qualified.

Comchip Technology CO., LTD.

REV:B

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