CPDVR5V0P-HF

Page 1

Comchip Technology CO., LTD.

REV:A

QW-JP056

RoHS Device

- Low capacitance.

- IEC61000-4-2 Level 4 ESD Protection.

- Fast response time.

- Low Leakage current.

- Low reverse clamping voltage.

Features

Notes: 1. Device stressed with ten non-repetitive ESD pulses.

Circuit Diagram

Mechanical data

- Mounting position: Any.

Halogen Free

±15

VESD

W

4

52

PPP

Peak Pulse Power

ESD per IEC 61000-4-2(Air)

Parameter

Symbol

Value

Unit

Maximum Rating (at TA=25°C unless otherwise noted)

ESD per IEC 61000-4-2(Contact)

Peak Pulse Current

IPP

±15

A

μA

V

5

IR

VRWM

Reverse leakage current

Reverse stand-Off voltage

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

VRWM = 5 V

Electrical Characteristics (at TA=25°C unless otherwise noted)

Breakdown voltage

IT = 1 mA

V(BR)

Clamping voltage

IPP= 4 A

VC

V

5.6

Junction capacitance

CJ

pF

1

13

V

8

VR= 0V , F=1MHz

3

kV

±16

ESD Voltage

0.4

Per Human Body Model

Per Machine Model

Low Capacitance SMD ESD Protection Diode

Company reserves the right to improve product design , functions and reliability without notice.

- Bi-directional ESD protection of one line.

JESD22-A114-B ESD Voltage

(2)

(3)

- Case: WBFBP-02C-A plastic-encapsulate diodes

2. Other voltages available upon request.

3. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.

°C

-55 to +150

260

TL

Lead Solder Temperature

Junction & Storage temperature range

TJ, TSTG

°C

Maximum (10 Second Duration)

(3)

(3)

(1)

Dimensions in inches and (millimeter)

WBFBP-02C-A

0.027(0.68)

0.023(0.58)

0.014(0.36)

0.002(0.05)

0.002(0.05)

0.015(0.37)

0.011(0.27)

0.015(0.39)

REF.

REF.

REF.

REF.

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.022(0.55)

0.018(0.45)

0.004(0.09)

0.020(0.50)

0.016(0.40)

0.017(0.42)

REF.

0.000(0.01)

- Terminals: Tin plated, solderable per

MIL-STD-750, method 2026.