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PBYR10100X 데이터시트(PDF) 1 Page - NXP Semiconductors |
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PBYR10100X 데이터시트(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR10100X series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 100 V • Reverse surge capability • High thermal cycling performance I F(AV) = 10 A • Isolated mounting tab V F ≤ 0.74 V GENERAL DESCRIPTION PINNING SOD113 (SOT186A) Schottky rectifier diodes in a plastic PIN DESCRIPTION envelope with electrically isolated mounting tab. Intended for use as 1 cathode output rectifiers in low voltage, high frequency switched mode power 2 anode supplies. case isolated The PBYR10100 series is supplied in the conventional leaded SOD113 package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM Peak repetitive reverse - 100 voltage V V RWM Working peak reverse - 100 V voltage V R Continuous reverse voltage T hs ≤ 115 ˚C - 100 V I F(AV) Average rectified forward square wave; δ = 0.5; T hs ≤ 114 ˚C - 10 A current I FRM Repetitive peak forward square wave; δ = 0.5; T hs ≤ 114 ˚C - 20 A current I FSM Non-repetitive peak forward t = 10 ms - 135 A current t = 8.3 ms - 150 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 150 ˚C ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V both terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree C isol Capacitance from both terminals f = 1 MHz - 10 - pF to external heatsink k a 12 12 case November 1999 1 Rev 1.000 |
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