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PBYR1020D 데이터시트(PDF) 1 Page - NXP Semiconductors |
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PBYR1020D 데이터시트(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR1025D series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 20 V/ 25 V • Reverse surge capability • High thermal cycling performance I F(AV) = 10 A • Low thermal resistance V F ≤ 0.41 V GENERAL DESCRIPTION PINNING SOT428 Schottky rectifier diodes in a PIN DESCRIPTION surface mounting plastic envelope. Intended for use as output rectifiers 1 no connection in low voltage, high frequency switched mode power supplies. 2 cathode 1 The PBYR1025D series is supplied 3 anode in the SOT428 surface mounting package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR10 20D 25D V RRM Peak repetitive reverse - 20 25 V voltage V RWM Working peak reverse - 20 25 V voltage V R Continuous reverse voltage T mb ≤ 120 ˚C - 20 25 V I F(AV) Average rectified forward square wave; δ = 0.5; T mb ≤ 140 ˚C - 10 A current I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 140 ˚C - 20 A current I FSM Non-repetitive peak forward t = 10 ms - 100 A current t = 8.3 ms - 110 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C k a tab 3 1 2 3 tab 1 It is not possible to make connection to pin 2 of the SOT428 package. April 1998 1 Rev 1.000 |
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