PBYR2100CT datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 25

Philips Semiconductors

Product speciﬁcation

Schottky barrier double diode

PBYR2100CT

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Refer to SOT223 standard mounting conditions.

2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power

losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses

PR and IF(AV) rating will be available on request.

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT223 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

100

VRRM

repetitive peak reverse voltage

−

100

VRWM

crest working reverse voltage

−

100

IF(AV)

average forward current

Tamb =85 °C; see Fig.2;

Rth j-a = 70 K/W; note 1;

VR(equiv) = 0.2 V; note 2

−

IFSM

non-repetitive peak forward current

t = 8.3 ms half sine wave;

JEDEC method

−

IRSM

non-repetitive peak reverse current

tp = 100 µs

−

0.5

Tstg

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Tamb

operating ambient temperature

−

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

forward voltage

IF = 1 A; note 1; see Fig.3

790

IF = 1 A; Tj = 100 °C; note 1; see Fig.3

690

reverse current

VR =VRRMmax; note 1; see Fig.4

0.5

VR =VRRMmax; Tj = 100 °C; note 1; see Fig.4

diode capacitance

VR = 4 V; f = 1 MHz; see Fig.5

100

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

PBYR2100CT 데이터시트(PDF) 3 Page - NXP Semiconductors

PBYR2100CT 데이터시트(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL