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PBYR325CTD 데이터시트(PDF) 2 Page - NXP Semiconductors |
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PBYR325CTD 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR325CTD series Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction per diode - - 5 K/W to mounting base both diodes - - 4 K/W R th j-a Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W to ambient board ELECTRICAL CHARACTERISTICS All characteristics are per diode at T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 1.5 A; Tj = 125˚C - 0.34 0.4 V I F = 3 A; Tj = 125˚C - 0.39 0.5 V I F = 3 A - 0.47 0.6 V I R Reverse current V R = VRWM - 0.05 2 mA V R = VRWM; Tj = 100˚C - 4 8 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 117 - pF February 1998 2 Rev 1.000 |
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