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PBYR6045WT 데이터시트(PDF) 2 Page - NXP Semiconductors |
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PBYR6045WT 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR6045WT series Schottky barrier ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage per diode I F = 30 A; Tj = 125˚C - 0.51 0.58 V I F = 60 A; Tj = 125˚C - 0.7 0.75 V I F = 30 A - 0.54 0.61 V I F = 60 A - 0.69 0.76 V I R Reverse current per diode V R = VRWM - 0.3 5 mA V R = VRWM; Tj = 100˚C - 30 90 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 1000 - pF December 1998 2 Rev 1.000 |
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