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PBYR635CT 데이터시트(PDF) 2 Page - NXP Semiconductors |
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PBYR635CT 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR645CT series Schottky barrier ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 5 A; Tj = 125˚C - 0.51 0.6 V I F = 10 A - 0.72 0.87 V I R Reverse current V R = VRWM - 0.12 0.5 mA V R = VRWM; Tj = 100˚C - 10 15 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 150 - pF May 1998 2 Rev 1.200 |
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