Data Sheet

ADPA1113

2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier

Rev. 0

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FEATURES

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Internally matched and AC-coupled, 40 W, GaN power amplifier

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Integrated drain bias inductor

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POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm)

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Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz

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Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21

dBm)

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PAE: 39% typical from 2.3 GHz to 5.7 GHz

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VDD = 28 V at IDQ = 750 mA

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14-lead ceramic leaded chip carrier [LDCC] with a copper-molyb-

denum base

APPLICATIONS

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Military jammers

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Commercial and military radars

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Test and measurement equipment

GENERAL DESCRIPTION

The ADPA1113 is a gallium nitride (GaN), broadband power amplifi-

er delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency

(PAE) from 2.3 GHz to 5.7 GHz. No external matching or AC-cou-

pling are required to achieve full-band operation. Additionally, no

external inductor is required to bias the amplifier.

The ADPA1113 is ideal for continuous wave applications, such as

military jammers and radars.

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram