8NM60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R205-088.E



ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

600

V

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

10

μA

Gate- Source Leakage Current

Forward

IGSS

VGS = 30V, VDS = 0V

100

nA

Reverse

VGS = -30V, VDS = 0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.5

4.5

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 4.0A

0.75

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0 MHz

462

pF

Output Capacitance

COSS

351

pF

Reverse Transfer Capacitance

CRSS

33

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

QG

VDS=480V, VGS=10V, ID=8.0A,

IG=1mA (Note 1, 2)

22

nC

Gate to Source Charge

QGS

6

nC

Gate to Drain Charge

QGD

7

nC

Turn-on Delay Time (Note 1)

tD(ON)

VDD=100V, VGS=10V, ID=8.0A,

RG =25Ω (Note 1, 2)

13

ns

Rise Time

tR

21

ns

Turn-off Delay Time

tD(OFF)

61

ns

Fall-Time

tF

33

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Pulsed Current

IS

8

A

Drain-Source Diode Forward Voltage (Note 1)

ISM

32

A

Maximum Body-Diode Continuous Current

VSD

IS=8.0A, VGS=0V

1.4

V

Reverse Recovery Time (Note 1)

trr

IS=8.0A, VGS=0V

dIF/dt=100A/µs

285

ns

Reverse Recovery Charge

Qrr

6.6

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.