2SC4497 datasheet(1/3 Pages) ISC

부품명	2SC4497

상세설명	isc Silicon NPN Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Power Transistor

2SC4497

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 300V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):0.5V(Max) @IC=20mA

APPLICATIONS

· Switching Regulators

· Converters

· Power Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

100

mA

IB

Base current

20

mA

PC

Collector Power Dissipation @TC=25℃

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

유사한 부품 번호 - 2SC4497

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SC4497	169Kb / 4P	NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL APPLICATIONS)
Guangdong Kexin Industr...	2SC4497	36Kb / 1P	Silicon NPN Triple Diffused Type
Toshiba Semiconductor	2SC4497	117Kb / 5P	High Voltage Control Applications
Toshiba Semiconductor	2SC4497	117Kb / 5P	High Voltage Control Applications

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2SC4497 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

2SC4497 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

유사한 부품 번호 - 2SC4497

유사한 설명 - 2SC4497

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