ST92F124_06 datasheet(56/429 Pages) STMICROELECTRONICS

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ST92F124/F150/F250 - SINGLE VOLTAGE FLASH & E3 TM (EMULATED EEPROM)

3.3 REGISTER DESCRIPTION

3.3.1 Control Registers

FLASH CONTROL REGISTER (FCR)

Address: 224000h / 221000h- Read/Write

Reset value: 0000 0000 (00h)

The Flash Control Register is used to enable all

the operations for the Flash and the TestFlash

memories.

Bit 7 = FWMS: Flash Write Mode Start (Read/

Write).

This bit must be set to start each write/erase oper-

ation in Flash memory. At the end of the write/

erase operation or during a Sector Erase Suspend

this bit is automatically reset. To resume a sus-

pended Sector Erase operation, this bit must be

set again. Resetting this bit by software does not

stop the current write operation.

0: No effect

1: Start Flash write

Bit 6 = FPAGE: Flash Page program (Read/Write).

This bit must be set to select the Page Program

operation in Flash memory. This bit is automatical-

ly reset at the end of the Page Program operation.

The Page Program operation allows to program

“0”s in place of “1”s. From 1 to 16 bytes can be en-

tered (in any order, no need for an ordered ad-

dress sequence) before starting the execution by

setting the FWMS bit. All the addresses must be-

long to the same page (only the 4 LSBs of address

can change). Data to be programmed and ad-

dresses in which to program must be provided

(through an LD instruction, for example). Data

contained in page addresses that are not entered

are left unchanged.

0: Deselect page program

1: Select page program

Bit 5 = FCHIP: Flash CHIP erase (Read/Write).

This bit must be set to select the Chip Erase oper-

ation in Flash memory. This bit is automatically re-

set at the end of the Chip Erase operation.

The Chip Erase operation erases all the Flash lo-

cations to FFh. The operation is limited to Flash

code: sectors F0-F3 (or F0-F5 for the ST92F250),

TestFlash and E3 TM excluded. The execution

starts by setting the FWMS bit. It is not necessary

to pre-program the sectors to 00h, because this is

done automatically.

0: Deselect chip erase

1: Select chip erase

Bit 4 = FBYTE: Flash byte program (Read/Write).

This bit must be set to select the Byte Program op-

eration in Flash memory. This bit is automatically

reset at the end of the Byte Program operation.

The Byte Program operation allows “0”s to be pro-

grammed in place of “1”s. Data to be programmed

and an address in which to program must be pro-

vided (through an LD instruction, for example) be-

fore starting execution by setting bit FWMS.

0: Deselect byte program

1: Select byte program

Bit 3 = FSECT: Flash sector erase (Read/Write).

This bit must be set to select the Sector Erase op-

eration in Flash memory. This bit is automatically

reset at the end of the Sector Erase operation.

The Sector Erase operation erases all the Flash

locations to FFh. From 1 to 6 sectors (F0-F5) can

be simultaneously erased. These sectors can be

entered before starting the execution by setting

the FWMS bit. An address located in the sector to

erase must be provided (through an LD instruc-

tion, for example), while the data to be provided is

don’t care. It is not necessary to pre-program the

sectors to 00h, because this is done automatically.

0: Deselect sector erase

1: Select sector erase

Bit 2 = FSUSP: Flash sector erase suspend

(Read/Write).

This bit must be set to suspend the current Sector

Erase operation in Flash memory in order to read

data to or from program data to a sector not being

erased. The FSUSP bit must be reset (and FWMS

must be set again) to resume a suspended Sector

Erase operation.

The Erase Suspend operation resets the Flash

memory to normal read mode (automatically reset-

ting bit FBUSY) in a maximum time of 15

µs.

765

FWMS FPAGE FCHIP FBYTE FSECT FSUSP PROT FBUSY

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