MCP6031TESLASHMS datasheet(4/30 Pages) MICROCHIP

4 / 30 page

MCP6031/2/3/4

DS22041A-page 4

MCP6033 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS

FIGURE 1-1:

Timing Diagram for the CS

Pin on the MCP6033.

Electrical Specifications: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VCM =VDD/

2, VOUT =VDD/2, VL = VDD/2, CL = 60 pF and RL = 1 MΩ to VL (Refer to Figure 1-1).

Parameters

Sym

Min

Typ

Max

Units

Conditions

CS Low Specifications

CS Logic Threshold, Low

VIL

VSS

—0.2VDD

CS Input Current, Low

ICSL

—-10

—

CS = VSS

CS High Specifications

CS Logic Threshold, High

VIH

0.8VDD

VDD

CS Input Current, High

ICSH

—10

—

CS = VDD

GND Current

ISS

—

-400

—

CS = VDD

Amplifier Output Leakage

IO(LEAK)

—10

—

CS = VDD

CS Dynamic Specifications

CS Low to Amplifier Output

Turn-on Time

tON

—

100

≤ 0.2VDD to VOUT = 0.9VDD/2,

G = +1 V/V, VIN = VDD/2,

RL = 50 kΩ to VL = VSS.

CS High to Amplifier Output

High-Z

tOFF

—10

—

µs

≥ 0.8VDD to VOUT = 0.1VDD/2,

G = +1 V/V, VIN = VDD/2,

RL = 50 kΩ to VL = VSS.

CS Hysteresis

VHYST

—0.3VDD

—V

VIL

High-Z

tON

VIH

tOFF

VOUT

-400 pA (typ.)

High-Z

ISS

ICS 10 pA (typ.)

-400 pA (typ.)

-0.9 µA (typ.)

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