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APT50M65LFLL 데이터시트(PDF) 2 Page - Advanced Power Technology

부품명 APT50M65LFLL
상세설명  POWER MOS 7 R FREDFET
PDF  5 Pages
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제조업체  ADPOW [Advanced Power Technology]
홈페이지  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT50M65LFLL 데이터시트(HTML) 2 Page - Advanced Power Technology

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DYNAMIC CHARACTERISTICS
APT50M65 B2FLL - LFLL
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.20
0.16
0.12
0.08
0.04
0
0.5
0.1
0.3
0.7
0.9
0.05
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.34mH, RG = 25Ω, Peak IL = 67A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-67A di/dt ≤ 700A/µs V
R ≤
500V
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.18
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
THERMAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -67A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -67A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -67A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -67A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN
TYP
MAX
67
268
1.3
15
Tj = 25°C
270
Tj = 125°C
540
Tj = 25°C
2.6
Tj = 125°C
9.6
Tj = 25°C
17
Tj = 125°C
31
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 67A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 250V
I
D
= 67A @ 25°C
R
G
= 0.6
Ω
INDUCTIVE SWITCHING @ 25°C
V
DD
= 333V, V
GS
= 15V
I
D
= 67A, R
G
= 3
Ω
INDUCTIVE SWITCHING @ 125°C
V
DD
= 333V V
GS
= 15V
I
D
= 67A, R
G
= 3
Ω
MIN
TYP
MAX
7010
1390
87
141
40
70
12
28
29
30
1035
845
1556
1013
UNIT
pF
nC
ns
µJ



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