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ZXMP3A13F 데이터시트(PDF) 2 Page - Zetex Semiconductors |
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ZXMP3A13F 데이터시트(HTML) 2 Page - Zetex Semiconductors |
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2 / 8 page ![]() ZXMP3A13F ISSUE 1 - MAY 2007 2 PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) RθJA 200 °C/W Junction to ambient (b) RθJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -30 V Gate Source Voltage VGS 20 V Continuous Drain Current VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) ID -1.6 -1.3 -1.4 A Pulsed Drain Current (c) IDM -6 A Continuous Source Current (Body Diode) (b) IS -1.2 A Pulsed Source Current (Body Diode) (c) ISM -6 A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS |
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