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BAS29 데이터시트(PDF) 1 Page - Goodwork Semiconductor Co., Ltd . |
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BAS29 데이터시트(HTML) 1 Page - Goodwork Semiconductor Co., Ltd . |
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1 / 3 page ![]() Silicon Epitaxial Planar Switching Diodes BAS29 BAS31 BAS35 3 3 3 1 2 1 2 1 2 BAS29 Marking Code: L20 BAS31 Marking Code: L21 BAS35 Marking Code: L22 SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 120 V Maximum Average Forward Current IF(AV) 200 mA Repetitive Peak Forward Current IFRM 600 mA Non-Repetitive Peak Forward Surge Current t = 1 µs t = 1 s IFSM 2 1 A Power Dissipation Ptot 350 mW Junction Temperature Tj 150 O C Storage Temperature Range Tstg - 55 to + 150 O C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA at IF = 200 mA at IF = 400 mA VF VF VF VF VF - - - - - 750 840 900 1 1.25 mV mV mV V V Reverse Current at VR = 90 V at VR = 90 V, TJ = 150 OC IR IR - - 100 100 nA µA Reverse Breakdown Voltage at IR = 1 mA V(BR)R 120 - V Total Capacitance at VR = 0 V, f = 1 MHz CT - 35 pF Reverse Recovery Time at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω trr - 50 ns BAS29-BAS31-BAS35 |
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