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2SD1691 데이터시트(PDF) 1 Page - Tiger Electronic Co.,Ltd

부품명 2SD1691
상세설명  Complementary Silicon Power Ttransistors
PDF  1 Pages
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제조업체  TGS [Tiger Electronic Co.,Ltd]
홈페이지  http://www.tgselec.com
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2SD1691 데이터시트(HTML) 1 Page - Tiger Electronic Co.,Ltd

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TO-126
Parameter
l
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
5.0
A
Collector Peak Current
IC(peak)
8.0
A
Total Dissipation at
Ptot
20
W
Max. Operating Junction Temperature
Tj
150
oC
Storage Temperature
Tstg
-55~150
oC
2SD1691 / 2SB1151
DESCRIPTION
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cutoff Current
ICBO
VCB=50V, IE=0
—
—
10
uA
Emitter Cut-off Current
IEBO
VEB=7.0V, IC=0
—
—
10
uA
Collector-Emitter Sustaining Voltage
VCEO
IC=10mA, IB=0
60
—
—
V
DC Current Gain
hFE(1)
VCE=1.0V, IC=0.1A
60
—
—
hFE(2)
VCE=1.0V, IC=2.0A
100
—
400
hFE(3)
VCE=1.0V, IC=5.0A
50
—
—
Collector-Emitter Saturation Voltage
VCE(sat)
IC=2.0A,IB=0.2A
—
—
0.3
V
Base - Emitter Saturation Voltage
VBE(sat)
IC=2.0A,IB=0.2A
—
—
1.2
V
Storage Time
tstg
IC=2.0A, IB1=-IB2=0.2A
—
—
2.5
us
Complementary Silicon Power Ttransistors
Product specification
It is intented for use in power
amplifier and switching applications.
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
O
( Ta = 25 C)
O
hfe(2): M 100~200, L 160~320, K 200~400
TIGER ELECTRONIC CO.,LTD


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