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PDTC114EU 데이터시트(PDF) 2 Page - NXP Semiconductors |
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PDTC114EU 데이터시트(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1999 Apr 16 2 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES • Built-in bias resistors R1 and R2 (typ. 10 k Ω each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT323 plastic package. PNP complement: PDTA114EU. PINNING PIN DESCRIPTION 1 base/input 2 emitter/ground 3 collector/output Fig.1 Simplified outline (SOT323) and symbol. handbook, 4 columns MAM134 R1 R2 3 2 1 3 2 1 Top view Fig.2 Equivalent inverter symbol. MGA893 - 1 1 3 2 MARKING Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. TYPE NUMBER MARKING CODE(1) PDTC114EU ∗09 |
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