1999 Apr 16

2

Philips Semiconductors

Preliminary specification

NPN resistor-equipped transistor

PDTC114TU

FEATURES

• Built-in bias resistor R1 (typ. 10 kΩ)

• Simplification of circuit design

• Reduces number of components

and board space.

APPLICATIONS

• Especially suitable for space

reduction in interface and driver

circuits

• Inverter circuit configurations

without use of an external resistor.

DESCRIPTION

NPN resistor-equipped transistor in a

SOT323 plastic package.

PINNING

PIN

DESCRIPTION

1

base/input

2

emitter/ground

3

collector/output

Fig.1 Simplified outline (SOT323) and symbol.

handbook, 4 columns

MAM277

R1

3

2

1

3

2

1

Top view

Fig.2

Equivalent inverter

symbol.

MGA893 - 1

1

3

2

MARKING

Note

1.

∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE

NUMBER

MARKING

PDTC114TU

∗24

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

5V

output current (DC)

−

100

mA

peak collector current

−

100

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C