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FN0612D5 데이터시트(PDF) 2 Page - Goodwork Semiconductor Co., Ltd .

부품명 FN0612D5
상세설명  N-Channel Enhancement MOSFET
PDF  4 Pages
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제조업체  GWSEMI [Goodwork Semiconductor Co., Ltd .]
홈페이지  http://www.goodwork.com.tw/
Logo GWSEMI - Goodwork Semiconductor Co., Ltd .

FN0612D5 데이터시트(HTML) 2 Page - Goodwork Semiconductor Co., Ltd .

  FN0612D5 Datasheet HTML 1Page - Goodwork Semiconductor Co., Ltd . FN0612D5 Datasheet HTML 2Page - Goodwork Semiconductor Co., Ltd . FN0612D5 Datasheet HTML 3Page - Goodwork Semiconductor Co., Ltd . FN0612D5 Datasheet HTML 4Page - Goodwork Semiconductor Co., Ltd .  
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Electrical Characteristics (TJ=25ºC unless noted otherwise)
Symbol
Parameters
Conditions
Min.
Typ.
Max. Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
60
Volt
IDSS
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
1
μA
IGSS
Gate-Body Leakage Current
VGS=±20V, VDS=0V
±100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=250μA
1.0
1.8
2.5
Volt
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=15A
2.1
2.5
mΩ
VGS=4.5V, ID=3A
2.7
3.4
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
VDS=30V, VGS=0V ,
F=1MHz
4947
pF
Coss
Output Capacitance
2850
pF
Crss
Reverse Transfer Capacitance
26
pF
Switching Characteristics
td(on)
Turn-on Delay Time
VDD=30V, ID=1A,
RGEN=3.3Ω
19
nS
tr
Turn-on Rise Time
12
nS
td(off)
Turn-Off Delay Time
62
nS
tf
Turn-Off Fall Time
130
nS
Qg
Total Gate Charge
VDS=50V, ID=50A,
VGS=10V
24
nC
Qgs
Gate-Source Charge
27
nC
Qgd
Gate-Drain Charge
19
nC
Drain-Source Diode Characteristics
VSD
Diode Forward Voltage
VGS=0V, IS=10A
0.72
1.4
V
 
 
 
 
 
 
 
FN0612D5



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