2001 Sep 14

2

Philips Semiconductors

Preliminary specification

PNP resistor-equipped double transistor

R1=10k

Ω, R2 = open

PEMB4

FEATURES

• 300 mW total power dissipation

• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin

package

• Excellent coplanarity due to straight leads

• Reduces number of components as replacement of two

SC-75/SC-89 packaged transistors

• Reduces required board space

• Reduces pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

DESCRIPTION

PNP resistor-equipped double transistor in a SOT666

plastic package.

MARKING

PINNING

TYPE NUMBER

MARKING CODE

PEMB4

B4

PIN

DESCRIPTION

1, 4

emitter

TR1; TR2

2, 5

base

TR1; TR2

6, 3

collector

TR1; TR2

handbook, halfpage

MAM452

12

3

4

6

5

Top view

65

4

12

3

TR1

TR2

R1

R1

Fig.1

Simplified outline (SOT666) and symbol.

MBK120

2, 5

6, 3

1, 4

Fig.2 Equivalent inverter symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

collector-emitter voltage

−50

V

peak collector current

−100

mA

TR1

PNP

−−

TR2

PNP

−−

R1

bias resistor

10

k

Ω