| 전자부품 데이터시트 검색엔진 |
|
BTD5350MBPR 데이터시트(PDF) 7 Page - BASIC SEMICONDUCTOR |
|
|
|||||||||||||||||||||||||||||
BTD5350MBPR 데이터시트(HTML) 7 Page - BASIC SEMICONDUCTOR |
|
7 / 19 page ![]() www.basicsemi.com 7/19 Rev.0.1 Single-ChannelIsolatedGateDriver BTD5350 MILLERCLAMPBTD5350Mx Vclamp Low-level clamp voltage Iclamp=20mA - 7 10 mV Iclamp Low-level clamp current VCLAMP=VEEx+15V 5 10 - A Vclamp-TH Clamping threshold voltage - - 2.2 - V SHORT-CIRCUITCLAMPING VCLP-OUT Clamping voltage (OUT-VCC2 or OUTH-VCC2) IN+=HIGH, IN–=LOW, tCLAMP=10µs, IOUTH or IOUT=500mA - 1 1.3 V Clamping voltage (VEE2-OUT or VEE2-OUTL or VEE2-CLAMP) IN+=LOW, IN–=HIGH, tCLAMP=10µs, ICLAMP or IOUTL=-500mA - 1.5 - IN+=LOW, IN–=HIGH, ICLAMP or IOUTL=-20mA - 0.9 1 ACTIVEPULL-DOWNFUNCTION VOUTSD Active pulldown voltage on OUTL, CLAMP, OUT IOUT=-1A (sinking into OUT, OUTL or CLAMP pin), VCC2=left open - 2.3 2.6 V SWITCHINGPARAMETERS tPLH Propagation delay, high CL=100pF - 60 75 ns tPHL Propagation delay, low CL=100pF - 60 75 tr Output-signal rise time CL=1nF - 10 26 tf Output-signal fall time CL=1nF - 10 26 tPWD Pulse width distortion[tPHL-tPLH] CL=100pF - 1 20 tsk 2) Part-to-part skew CL=100pF - 1 25 tUVLO1-rec Undervoltage lockout recovery delay time Input side VCC1 - 50 - µs tUVLO2-rec Output side VCC2 - 50 - CMTI Common-mode transient immunity INx tied to GND or VCC1, VCM=1500V 100 150 - kV/µs Note: 1. CL: Load capacitance from output pin OUTx to VEE2 or GND2. 2. tsk is the magnitude of the difference in propagation delay times between the output of different devices switching in the same direction while operating at identical supply voltages, temperature, input signals and loads guaranteed by characterization. (Continued) 7.6InsulationSpecifications SYMBOL PARAMETER TESTCONDITIONS MIN TYP MAX UNIT CLR External Clearance - 4 - - mm CPG External Creepage - 4 - - DTI Distance through the insulation - 17 - - µm CTI Comparative tracking index DIN EN 60112 600 - - V Overvoltage category per IEC 60664-1 Rated mains voltage≤150Vrms I-IV - - - Rated mains voltage≤300Vrms I- III - - DINVVDE0884–11 VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 990 - - VPK VIOWM Maximum isolation working voltage AC voltage (sine wave); time dependent dielectric breakdown (TDDB) test 700 - - Vrms VIOTM Maximum transient isolation voltage 100% VIOTM, 60s; 120% VIOTM, 1s 4242 - - VPK VIOSM Maximum surge isolation voltage IEC 62368-1, 1.2/50µs waveform, 1.6VIOSM 4242 - - qpd Apparent charge Method a:VIN=VIOTM, 60s; Vpd=1.2 VIOTM, 10s - - 5 pC Method a:VIN=VIOTM, 60s; Vpd=1.6 VIOTM, 10s - - 5 Method b1:VIN=1.2VIOTM, 1s; Vpd=1.875 VIOTM, 1s - - 5 CIO Barrier capacitance, input to output VIO=0.4Vpk, f=1MHz, sine wave - 1.2 - pF 7.6.1SOP-8SafetyParameters |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |