Analog Power

AMT4100N

N-Channel 100-V (D-S) MOSFET

VDS (V)

ID (A)

100

2.6

Symbol

Limit

Units

VDS

100

VGS

±20

Continuous Drain Current

a

TC=25°C

ID

2.6

IDM

10

IS

2.6

A

Power Dissipation

a

TC=25°C

PD

2.1

W

TJ, Tstg

-55 to 175

°C

Symbol

Maximum

Units

RθJA

40

RθJC

3

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

A

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case

Gate-Source Voltage

PRODUCT SUMMARY

rDS(on) (mΩ)

210 @ VGS = 10V

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• LED Inverter Circuits

• DC/DC Conversion Circuits

• Motor drives

SOT-223

© Preliminary

1

Publication Order Number:

DS_AMT4100N_1A