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PJS6806 데이터시트(PDF) 1 Page - Pan Jit International Inc. |
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PJS6806 데이터시트(HTML) 1 Page - Pan Jit International Inc. |
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1 / 6 page ![]() PJS6806 January 20,2022 PJS6806-REV.04 Page 1 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4A SOT-23 6L Unit : inch(mm) Features RDS(ON) , VGS@10V, ID@4.0A<48m Ω RDS(ON) , VGS@4.5V, ID@2.8A<70m Ω Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 6L Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: ST6 PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS +20 V Continuous Drain Current ID 4 A Pulsed Drain Current IDM 16 A Power Dissipation Ta=25oC PD 1.25 W Derate above 25oC 10 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal Resistance - Junction to Ambient(Note 3) RθJA 100 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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