Technical Data

Data Sheet N2417, REV.E



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

S4D30120H

S4D30120G

* Pulse width < 300 µs, duty cycle < 2%

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging

specification.

Electrical Characteristics:

Characteristics

Symbol

Condition

Typ.

Max.

Units

Forward Voltage Drop*

VF1

@ 30A, Pulse, TJ = 25 C

1.5

1.8

V

VF2

@ 30A, Pulse, TJ = 175 C

2.2

3.0

V

Reverse Current*

IR1

@VR = rated VR

，

TJ = 25 C

1

20

uA

IR2

@VR = rated VR

，

TJ = 175 C

5

200

uA

Junction Capacitance

CT

VR=1V, f=1MHz, Tj=25℃,

2581

-

pF

Reverse Recovery Charge

Qc

VR = 800 V, TJ =25°C

152

-

nC

Capacitance Stored Energy

EC

VR = 800 V, TJ =25°C

44

-

μJ

Thermal-Mechanical Specifications:

Characteristics

Symbol

Condition

S4D30120H

S4D30120G

Units

Junction Temperature

TJ

-

-55 to +175



C

Storage Temperature

Tstg

-

-55 to +175



C

Typical Thermal Resistance

Junction to Case

RθJC

DC operation,Tj=25℃

0.34

0.34



C/W

Electrostatic Discharge (ESD) Classifications:

Parameter

Symbol

Value

Human Body Model

HBM

Class 3B (≥ 8000 V)

Charge Device Model

CDM

Class C3 (≥ 1000 V)

Ordering Information

Device

Package

Shipping

S4D30120H

TO-247AC(TO-247-2)

25pcs / tube

S4D30120G

D2PAK（TO-263-2)）

800pcs / Reel