Technical Data

Data Sheet N2039, Rev.A



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

SCT640C

SCT840C

SCT640/840 Series 40A SCRs

Circuit Diagram

Description

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

Storage junction temperature range

Tstg

-

-40-150

℃

Operating junction temperature range

Tj

-

-40-125

℃

Repetitive peak off-state voltage(Tj=25℃)

VDRM

-

600/800

V

Repetitive peak reverse voltage(Tj=25℃)

VRRM

-

600/800

V

Non repetitive surge peak off-state voltage

VDSM

-

VDRM +100

V

Non repetitive peak reverse voltage

VRSM

-

VRRM +100

V

RMS on-state current

I(TRMS)

TO-220C(TC=85℃)

40

A

Non repetitive surge peak on-state current

(tp=10ms)

ITSM

-

460

A

I2t value for fusing (tp=10ms)

I2t

-

1060

A2s

Critical rate of rise of on-state current

(IG=2×IGT)

dI/dt

-

50

A/μs

Peak gate current

IGM

-

4

A

Average gate power dissipation

PG(AV)

-

1

W

Peak gate power

PGM

-

5

W

With high ability to withstand the shock loading of large current, SCT640/840 provide high dv/dt rate with strong

resistance to electromagnetic interference. They are especially recommended for use on solid state relay,

motorcycle, power charger, T-tools etc.

TO-220C